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| transistor(np) features ? high collector - emitter voltage ? complement t o mmb ta94 marking: 3d m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 500 v v ceo collector - emitter voltage 400 v v ebo emitter - base voltage 6 v i c collector current 100 m a p c collector power dissipation 350 m w r ja thermal resistance from j u nction to a mbient 357 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 100 a , i e =0 500 v collector - emitter breakdown voltage v (br) c e o * i c = 1 ma, i b =0 400 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 6 v collector cut - off current i cbo v cb = 4 00 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 4 v, i c =0 0.1 a h fe (1) * v ce = 10 v, i c = 1m a 40 h fe (2) * v ce = 10 v, i c = 10 ma 50 200 h fe (3) * v ce = 10 v, i c = 50m a 45 dc current gain h fe (4) * v ce = 10 v, i c = 100m a 40 v ce(sat) 1 * i c = 1m a, i b = 0.1 ma 0.4 v v ce(sat) 2 * i c = 10m a, i b = 1 ma 0.5 v collector - emitter saturation voltage v ce(sat) 3 * i c = 50m a, i b = 5 ma 0.75 v base - emitter saturation voltage v b e(sat) * i c = 10m a, i b = 1 ma 0.75 v collector output capacitance c ob v cb = 20 v, i e =0, f=1 m hz 7 pf emitter input capacitance c i b v e b = 0.5 v, i c =0, f=1 m hz 130 pf * p ulse test: p ulse w idth 3 00 s, d uty c ycle 2.0%. so t C 23 1. base 2. emitter 3. collector MMBTA44 1 date:2011/05 www.htsemi.com semiconductor jinyu
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